K9F4008W0A-TIB0 memory equivalent, 512k x 8 bit nand flash memory.
and specifications including FAQ, please refer to Samsung’s Flash web site. http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html. The attached datasheets are prep.
requiring nonvolatility.
PIN CONFIGURATION
PIN DESCRIPTION
VSS CLE ALE WE WP N.C N.C N.C N.C N.C N.C N.C N.C N.C N.C .
- SE is recommended to coupled to GND or Vcc and should not be toggled during reading or programming. 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets ready for any command sequences
~ 2.5V
Draft Da.
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